Simulation-Based Analysis of AlGaN/GaN Gate All Around Field Effect Transistor (AlGaN/GaN GAA-FET)
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-0312-0_21
Reference36 articles.
1. Yang L et al (2019) High channel conductivity, breakdown field strength, and low current collapse in AlGaN/GaN/Si δ-Doped AlGaN/GaN: C HEMTs. IEEE Trans Electron Devices 66(3):1202–1207
2. Khan AB, Anjum SG, Siddiqui MJ (2018) Effect of barrier layer thickness on AlGaN/GaN double gate MOS-HEMT device performance for high-frequency application. J Nanoelectron Optoelectron 13(1):20–26
3. Kalita S, Mukhopadhyay S (2018) Effect of gate length on the electrical characteristics of nanoelectronic AlGaN/GaN high electron mobility transistors to fabricate the biomedical sensors in nanoelectronics. J Nanoelectron Optoelectron 13(8):1123–1127
4. Varghese A, Periasamy C, Bhargava L, Vijayakumar K (2018) Impact of AlN interlayer’s in epitaxial and passivation scheme on the DC and microwave performance of doping-less GaN HEMT. J Nanoelectron Optoelectron 13(7):971–979
5. Colinge J-P (2008) FinFETs and other multi-gate transistors. Springer, Heidelberg
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