2D modelling of nanoscale double gate silicon-on-insulator MOSFETs using conformal mapping
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/2006/i=T126/a=013/pdf
Reference11 articles.
1. A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling
2. Two-Dimensional Analytical Modeling of Fully Depleted DMG SOI MOSFET and Evidence for Diminished SCEs
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