Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00607-x.pdf
Reference39 articles.
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3. Dennard, R., Gaensslen, F., Kuhn, L., Yu, H.: ‘Design of micron MOS switching devices’, IEEE IEDM Tech Dig, 1972, pp. 168–170
4. Lo S, Buchanan D, Taur Y, Wang W (1997) Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide n MOSFET’s. IEEE Electron Device Lett 18:209–212
5. Maity NP, Maity R, Baishya S (2017) Voltage and oxide thickness dependent tunneling current density and tunnel resistivity model: application to high-k material HfO2 based MOS devices. Superlattice Microst 111:628–641
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