Bipolar transistors for low noise, low temperature electronics
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference8 articles.
1. A low-noise amplifier for switched capacitor filters;Jolly;IEEE J Solid State Circ,1982
2. Electrical properties of silicon-implanted furnace-anneal silicon-on-sapphire devices;Roulet;Electronics Lett,1979
3. Direct observation of the structure of thin, commercially useful silicon on sapphire films;Ham;J Elec Chem Soc,1977
4. Optimization of silicon bipolar transistors for high current gain at low temperatures;Woo;IEEE Trans Electron Devices,1988
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Operational Amplifiers in the Temperature Range from 300 to 4 K;Proceedings of the Twentieth International Cryogenic Engineering Conference (ICEC20);2005
2. Radiation Effects and Low-Frequency Noise in Silicon Technologies;Low Temperature Electronics;2001
3. Anomalous latch-up behaviour of CMOS at liquid helium temperatures;Cryogenics;1990-12
4. Review of low-frequency noise in bipolar transistors over the last decade;Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212)
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