Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference17 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Reaction–diffusion in high-k dielectrics on Si
3. The Pr2O3/Si(001) interface
4. Praseodymium Silicate as a High-kDielectric Candidate: An Insight into the Pr2O3-Film/Si-Substrate Interface Fabricated Through a Metal-Organic Chemical Vapor Deposition Process
5. NEXAFS Spectroscopy;Stöhr,1996
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1. Single crystalline Pr2−xYxO3 (x=0–2) dielectrics on Si with tailored electronic and crystallographic structure;Journal of Applied Physics;2010-11-15
2. Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions;Physical Review B;2009-07-15
3. Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La[sub 2]O[sub 3]∕Si Interfaces for Advanced Gate Stacks;Journal of The Electrochemical Society;2009
4. Silicate formation at the interface of Hf-oxide as a high-k dielectrics and Si(001) surfaces;Materials Science in Semiconductor Processing;2006-12
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