Evidence for amplified interband spontaneous emission in Si-based trans-column quantum dots
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference4 articles.
1. Evolution of In‐based compound semiconductor quantum dots on Si (001)
2. Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
3. Band lineups and deformation potentials in the model-solid theory
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1. InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy;Nanotechnology;2008-10-09
2. Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer;Applied Physics Letters;2008-02-25
3. Amplified spontaneous emission from GaSb quantum dots in Si grown by MBE;Journal of Crystal Growth;2007-04
4. Photonic Non-Allied Heterostructure Devices Epitaxially Grown on Si;The Review of Laser Engineering;2007
5. Near-infrared gain in GaSb quantum dots in Si grown by MBE;Journal of Crystal Growth;2005-05
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