Near-infrared gain in GaSb quantum dots in Si grown by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Evolution of In‐based compound semiconductor quantum dots on Si (001)
2. Highly efficient radiative recombination of electron–hole pairs localized at compound semiconductor quantum dots embedded in Si
3. Evidence for amplified interband spontaneous emission in Si-based trans-column quantum dots
4. Band lineups and deformation potentials in the model-solid theory
5. Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
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1. Dissolution suppression of self-assembled GaSb quantum dots on silicon by proper surface preparation;Semiconductor Science and Technology;2020-08-25
2. Photoluminescence spectroscopy investigation of epitaxial Si/GaSb nanocrystals/Si heterostructure;AIP Conference Proceedings;2017
3. Solid phase epitaxy formation of silicon-GaSb based heterostructures;JJAP Conference Proceedings;2017
4. Amplified spontaneous emission from GaSb quantum dots in Si grown by MBE;Journal of Crystal Growth;2007-04
5. Photonic Non-Allied Heterostructure Devices Epitaxially Grown on Si;The Review of Laser Engineering;2007
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