Angular dependences of surface composition, sputtering and ripple formation on silicon under N2+ ion bombardment-Reference-Cited by-同舟云学术

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Angular dependences of surface composition, sputtering and ripple formation on silicon under N2+ ion bombardment

Published:2000-03 Issue:4 Volume:56 Page:241-245
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Bachurin V.I,Lepshin P.A,Smirnov V.K

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference37 articles.

1. Havmann P, Walburger C, In: Le Bombardment Ionique. Paris: CNRS, 1962, p. 205.

2. Navez M, Sella C, Chaperot D. In: Le Bombardment Ionique. Paris: CNRS, p. 233.

3. Relation between surface structures and sputtering ratios of copper single crystals

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1. Study of the topography of silicon surface evolution under irradiation by a gallium ion beam;Vacuum;2022-09

2. Features of the Formation of Ripple Structures on the Surface of Silicon under Irradiation with a Focused Gallium Ion Beam;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2021-12

3. Surface erosion by moving ion beam;Vacuum;2021-11

4. Angular Dependences of Silicon Sputtering by Gallium Focused Ion Beam;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2020-07

5. Angle-dependent sputter yield of rippled surfaces;Applied Surface Science;2018-11

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