Role of the gas temperature and power to gas flow ratio on powder and voids formation in films grown by PECVD technique
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference12 articles.
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1. Effect of gas temperature on the structural and optoelectronic properties of a-Si:H thin films deposited by PECVD;Surface and Coatings Technology;2013-01
2. Hydrogen bonding in hydrogenated amorphous silicon thin films prepared at different precursor gas temperatures with undiluted silane;Science China Technological Sciences;2011-05-14
3. Nanostructured silicon and its application to solar cells, position sensors and thin film transistors;Philosophical Magazine;2009-10
4. Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films;Science in China Series E: Technological Sciences;2008-10-23
5. Effects of gas temperature on optical and transport properties of a-Si:H films deposited by PECVD;Philosophical Magazine;2008-09
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