Effects of gas temperature on optical and transport properties of a-Si:H films deposited by PECVD
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786430802498998
Reference14 articles.
1. LETI/LIR's amorphous silicon uncooled microbolometer development
2. Investigation of electrical transport properties of as-implanted silicon for making micromachined uncooled bolometric arrays
3. Advanced IR detector technology development at CEA/LETI
4. Influence of gas temperature on the loss mechanisms of H-atoms in a pulsed microwave discharge identified by time-resolved LIF measurements
5. Role of the gas temperature and power to gas flow ratio on powder and voids formation in films grown by PECVD technique
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