Plasma-enhanced chemical vapor deposition of silicon nitride below 250°C
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference7 articles.
1. Water‐Resistant Coating on Low Temperature Amorphous Silicon Nitride Films by a Thin Layer of Amorphous Silicon Hydrogen Alloy
2. Characteristics of low-temperature silicon nitride (SiNx:H) using electron cyclotron resonance plasma
3. Hydrogenated silicon nitride thin films deposited between 50 and 250 °C using nitrogen/silane mixtures with helium dilution
4. Kuo Y. Proceedings of the 12th International Symposium on CVD, Hawaii, 1993. Pennington, NJ: Electrochemical Society, 1993. p. 350.
5. Etch mechanism in the low refractive index silicon nitride plasma‐enhanced chemical vapor deposition process
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