Technology and performance of 150nm gate length InGaP/InGaAs/GaAs pHEMTs-Reference-Cited by-同舟云学术

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Technology and performance of 150nm gate length InGaP/InGaAs/GaAs pHEMTs

Published:2001-05 Issue:2-4 Volume:61 Page:323-327
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Lalinský T,Škriniarová J,Kuzmı́k J,Hasenöhrl S,Fox A,Tomáška M,Mozolová Ž,Kovac̆ik T,Krajcer A,Kordoš P

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference16 articles.

1. Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers

2. Narrow-channel GaInP/InGaAs/GaAs MODFETs for high-frequency and power applications

3. Zaknoune M, Schuler O, Mollot F, Théron D, Crosnier Y. 1999;35:501–502.

4. High-performance InGaP/InxGa/sub 1-x/As HEMT with an inverted delta-doped V-shaped channel structure

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Is HEMT operating in 2D mode?;Microelectronics Journal;2009-03

2. High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy;Journal of Crystal Growth;2003-04

3. Coplanar waveguides supported by InGaP and GaAs/AlGaAs membrane-like bridges;Journal of Micromechanics and Microengineering;2002-06-14

4. GaAs Cantilever and Bridge Membrane-Like Structures Fully Compatible with AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs Based HFETs;Microsystems;2002

5. T-shaped gates for heterostructure field effect transistors;Vacuum;2001-05-14

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