0.1 [micro sign]m Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990239?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Effect of traps on low-temperature high electron mobility transistor characteristics
2. Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 K
3. Interface quality and electron transfer at the GaInP on GaAs heterojunction
4. GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: design, fabrication, and device results
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1. Coplanar waveguides supported by InGaP and GaAs/AlGaAs membrane-like bridges;Journal of Micromechanics and Microengineering;2002-06-14
2. GaAs Cantilever and Bridge Membrane-Like Structures Fully Compatible with AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs Based HFETs;Microsystems;2002
3. Technology and performance of 150nm gate length InGaP/InGaAs/GaAs pHEMTs;Vacuum;2001-05
4. AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact;Japanese Journal of Applied Physics;2001-03-15
5. (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barrier layer grown by gas source molecular beam epitaxy for V-band (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As/GaAs power pseudomorphic HEMT;Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)
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