Materials for optoelectronic and photonic integrated circuits
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference22 articles.
1. Monolithic integration of a pin photodiode and a field‐effect transistor using a new fabrication technique—graded step process
2. GaAs optoelectronic integrated receiver with high-output fast-response characteristics
3. Four‐channel AlGaAs/GaAs optoelectronic integrated transmitter array
4. Accumulation mode Ga0.47In0.53As insulated gate field‐effect transistors
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Laser Diodes and Integrated Optoelectronic Circuits for Fiber Optical Applications;European Transactions on Telecommunications;1993-11
2. Locally ion-implanted JFET in an InGaAs/InP p-i-n photodiode layer structure for a monolithically planar integrated receiver OEIC;IEEE Photonics Technology Letters;1992-03
3. Fabrication of a GaAs-on-InP, four channel variable bandwidth optical receiver, opto-electronic integrated circuit (OEIC), using a seeded-mask technology;Journal of Electronic Materials;1991-12
4. Planar integration technologies for optoelectronic integrated circuits;Microelectronic Engineering;1991-10
5. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates;Applied Physics Letters;1991-08-12
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