Locally ion-implanted JFET in an InGaAs/InP p-i-n photodiode layer structure for a monolithically planar integrated receiver OEIC-Reference-Cited by-同舟云学术

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Locally ion-implanted JFET in an InGaAs/InP p-i-n photodiode layer structure for a monolithically planar integrated receiver OEIC

Published:1992-03 Issue:3 Volume:4 Page:253-255
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Bauer J.G.,Albrecht H.,Hoffmann L.,Romer D.,Walter J.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx3/68/3480/00122383.pdf?arnumber=122383

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of InGaAs p-i-n photo-detectors prepared on misoriented Si substrates;International Conference on Optoelectronic Information and Functional Materials (OIFM 2023);2023-08-07

2. Junction Field Effect Transistors for Nanoelectronics;IEEE Transactions on Nanotechnology;2009-11

3. Design and analysis of a single HBT-based optical receiver front-end;Solid-State Electronics;2005-08

4. A proposed ultra low-noise optical receiver for 1.55 mu m applications;Optical and Quantum Electronics;2003

5. High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+p junction devices;Journal of Applied Physics;2000-04

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