Fabrication of a GaAs-on-InP, four channel variable bandwidth optical receiver, opto-electronic integrated circuit (OEIC), using a seeded-mask technology-Reference-Cited by-同舟云学术

Fabrication of a GaAs-on-InP, four channel variable bandwidth optical receiver, opto-electronic integrated circuit (OEIC), using a seeded-mask technology

Published:1991-12 Issue:12 Volume:20 Page:1029-1031
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

O’sullivan P. J.,Allan D. A.,Herniman J.,Coyle N.,Young R.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF03030201.pdf

Reference5 articles.

1. D. Wakeet al. Electron Letts.23, 415 (1987).

2. GaAs-on-InP MESFETs for OEICs. P. J. O’Sullivanet al. IEE Colloquium on InP Integrated Circuits, 21 June 1990. Digest No. 1990/111, 12.1 to 12.4.

3. I. D. Henning, Prog. Cryst. Growth and Charact. 19, 1 (1989).

4. Ohmic contacts for GaAs ICs using a ZrB2 barrier layer. J. Hernimanet al. IEE Proc.135, Pt. 1, 67, June 1988.

5. Monolithic Integration of 4 channel, Voltage Tuneable Transimpedance Photoreceiver Array. D. Newsonet al. 17 th Euro. Conf. On Opt. Comm. (ECOC ’91), pp. 489–492, 9–12 Sept 1991.

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1. Growth of GaAsInP heteromaterials and corresponding strain determination;Materials Science and Engineering: B;1995-12

2. Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits;Japanese Journal of Applied Physics;1994-06-15

3. Photodetectors and OEIC Receivers;Optoelectronic Integration: Physics, Technology and Applications;1994

4. Selective-area epitaxy for GaAs-on-InP optoelectronic integrated circuits (OEICs);Semiconductor Science and Technology;1993-06-02

5. Fabrication of a four-channel DFB laser transmitter OEIC for 1550 nm operation;Electronics Letters;1993