Thermal desorption of surface phosphorus on Si(100) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. High doping of phosphorus in Si using gas source molecular beam epitaxy
2. Gas source molecular‐beam epitaxy of Si and SiGe using Si2H6and GeH4
3. Phosphorus gas doping in gas source silicon-MBE
4. Gas source MBE growth of device materials
5. Prediction of concentration profile for P doping in Si gas-source molecular beam epitaxy
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2. Reaction paths of phosphine dissociation on silicon (001);The Journal of Chemical Physics;2016-01-07
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5. Characteristics of in-situ phosphorus-doped silicon selective epitaxial growth at atmospheric pressure;Journal of Crystal Growth;2008-10
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