Direct observation of anisotropic step activity on GaAs(001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference15 articles.
1. Surface evolution in GaAs(110) homoepitaxy; from microscopic to macroscopic morphology
2. Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A
3. Formation of High-Density Quantum Dot Arrays by Molecular Beam Epitaxy
4. Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructures
5. Scanning electron microscopy of InAs aggregation on GaAs vicinal surfaces in molecular beam epitaxy
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1. Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting;APL Materials;2019-02
2. The study of nano-structure on in-situ UV laser irradiating GaAs(001) substrate;Sixth International Conference on Optical and Photonic Engineering (icOPEN 2018);2018-07-24
3. Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions;Advances in Semiconductor Nanostructures;2017
4. Anisotropy in Ostwald ripening and step-terraced surface formation on GaAs(0 0 1): Experiment and Monte Carlo simulation;Applied Surface Science;2015-12
5. Leveraging Crystal Anisotropy for Deterministic Growth of InAs Quantum Dots with Narrow Optical Linewidths;Nano Letters;2013-09-05
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