Surface evolution in GaAs(110) homoepitaxy; from microscopic to macroscopic morphology
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructures
2. Formation of a high quality two‐dimensional electron gas on cleaved GaAs
3. Cleaved edge overgrowth for quantum wire fabrication
4. Silicon compensation and scattering mechanisms in two-dimensional electron gases on (110)GaAs
5. Transition From Single-Layer to Double-Layer Steps on GaAs(110) Prepared by Molecular Beam Epitaxy
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2. Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110);Journal of Alloys and Compounds;2021-09
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4. Study of the Surface Morphology, Electrophysical Characteristics, and Photoluminescence Spectra of GaAs Epitaxial Films on GaAs(110) Substrates;Optics and Spectroscopy;2020-07
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