Nickel-induced defects and their role in governing chlorine chemistry on the Si(100) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference43 articles.
1. Scanning tunneling microscopy study of Si (001) and Si (110) surface structures resulting from different thermal cleaning treatments
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3. Summary Abstract: Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopy
4. The role of nickel in Si(001) roughening
5. Energetics of Ni-Induced Vacancy Line Defects on Si(001)
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1. The mechanism of amine formation on Si(100) activated with chlorine atoms;Surface Science;2006-09
2. Methylamine Adsorption on and Desorption from Si(100);The Journal of Physical Chemistry B;2003-05-16
3. Cl2 surface chemistry on Cu/Si(100): an ISS, XPS, and TPD study;Surface Science;2001-03
4. Characterization of chlorinated chemical vapor deposited and natural (100) diamond;Surface Science;1999-04
5. Intriguing kinetics for chlorine etching of the Si(100)-(2×1) surface;The Journal of Chemical Physics;1999-02-22
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