Energetics of Ni-Induced Vacancy Line Defects on Si(001)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.75.3890/fulltext
Reference19 articles.
1. Anisotropic vacancy kinetics and single-domain stabilization on Si(100)-2×1
2. Surface reconstruction in layer-by-layer sputtering of Si(111)
3. Symmetry and stability of solitary dimer rows on Si(100)
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