Real-time analysis of Si monolayer formation on GaAs(001) during MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference15 articles.
1. Reflection high‐energy electron diffraction study of the GaAs:Si:GaAs system
2. The characterization of the growth of sub-monolayer coverages ( to 1 monolayer) of Si and Be on GaAs(001): A reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study
3. Growth of Si on different GaAs surfaces: A comparative study
4. Silicon molecular beam epitaxy on gallium arsenide
5. The location of silicon atoms and the initial stages of formation of the interface studied by STM
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. IN SITU OBSERVATION DURING MOLECULAR BEAM EPITAXY: IMPURITY INCORPORATION AND DISSIMILAR MATERIALS EPITAXIAL GROWTH ON GaAs(001);Handbook of Surfaces and Interfaces of Materials;2001
2. Controllable step bunching induced by Si deposition on the vicinal GaAs(001) surface;Surface Science;2000-07
3. In-situ control during molecular beam epitaxy: impurity incorporation and dissimilar materials epitaxial growth;Materials Science and Engineering: B;2000-06
4. Silicon-induced nanostructure evolution of the GaAs(001) surface;Physical Review B;2000-01-15
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