The location of silicon atoms and the initial stages of formation of the interface studied by STM
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference35 articles.
1. Efficient operation of an Yb-sensitised Er fibre laser at 1.56 μm
2. Dopant‐surface migration and interactions from reflection high‐energy electron diffraction dynamics
3. Reflection high‐energy electron diffraction study of the GaAs:Si:GaAs system
4. Characterization of GaAs grown on Si epitaxial layers on GaAs substrates
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1. Atomic structure of the (3×2) Si–GaAs (001) reconstructed surface: A clue to δ doping mechanism derived from in situ grazing incidence X-ray diffraction data;Surface Science;2010-02
2. A first-principles surface phase diagram study for Si-adsorption processes on GaAs(111)A surfaces;Surface Science;2010-01
3. An ab initio-based approach to adsorption–desorption behavior of Si adatoms on GaAs(111)A–(2×2) surfaces;Applied Surface Science;2009-11
4. IN SITU OBSERVATION DURING MOLECULAR BEAM EPITAXY: IMPURITY INCORPORATION AND DISSIMILAR MATERIALS EPITAXIAL GROWTH ON GaAs(001);Handbook of Surfaces and Interfaces of Materials;2001
5. In-situ control during molecular beam epitaxy: impurity incorporation and dissimilar materials epitaxial growth;Materials Science and Engineering: B;2000-06
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