The characterization of the growth of sub-monolayer coverages ( to 1 monolayer) of Si and Be on GaAs(001): A reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study-Reference-Cited by-同舟云学术

The characterization of the growth of sub-monolayer coverages ( to 1 monolayer) of Si and Be on GaAs(001): A reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study

Published:1995-05 Issue: Volume:150 Page:197-201
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Woolf D.A.,Rose K.C.,Morris S.J.,Westwood D.I.,Rumberg J.,Reinhardt F.,Richter W.,Williams R.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Delta doping of III–V compound semiconductors: Fundamentals and device applications

2. Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative study

3. Control of semiconductor interface barriers by δ-doping

4. Structure and local dipole of Si interface layers in AlAs-GaAs heterostructures

5. Reappraisal of Si-Interlayer-Induced Change of Band Discontinuity at GaAs-AlAs Heterointerface Taking Account of Delta-Doping

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