Control of semiconductor interface barriers by δ-doping-Reference-Cited by-同舟云学术

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Control of semiconductor interface barriers by δ-doping

Published:1992-01 Issue: Volume:56-58 Page:749-755
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Shen T.-H.,Elliott M.,Williams R.H.,Woolf D.A.,Westwood D.I.,Ford A.C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. Metal-Semiconductor Contacts;Rhoderick,1988

2. Band-gap engineering and interface engineering: from graded-gap structures to tunable band discontinuities;Capasso,1987

3. Increasing the effective height of a Schottky barrier using low‐energy ion implantation

4. Doping interface dipoles: Tunable heterojunction barrier heights and band‐edge discontinuities by molecular beam epitaxy

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Delta(δ)-doping of semiconductor nanowires;physica status solidi (RRL) - Rapid Research Letters;2013-07-01

2. Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping;physica status solidi (RRL) - Rapid Research Letters;2013-04-11

3. Engineering and investigating the control of semiconductor surfaces and interfaces;Journal of Physics D: Applied Physics;2002-04-18

4. The Metal-Semiconductor Interface;Electronic Structure;2000

5. Interface states at semiconductor junctions;Reports on Progress in Physics;1999-01-01

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