Gas—surface reactivity in mixed-crystal systems: the reaction of GeH4 and Ge2H6 on Si surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference41 articles.
1. Electronic structure of ordered silicon alloys: Direct-gap systems
2. Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth
3. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
4. Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films
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