The electronic and optical properties of InGaAs/InP and InAlAs/InP superlattices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference39 articles.
1. InGaAs/InP multiple quantum well waveguide phase modulator
2. Low‐loss multiple quantum well GaInAs/InP optical waveguides
3. Strained InGaAs/InP quantum well lasers
4. A high‐gain, high‐bandwidth In0.53Ga0.47As/InP heterojunction phototransistor for optical communications
5. Responses of InP/Ga0.47In0.53As/InP heterojunction bipolar transistors to 1530 and 620 nm ultrafast optical pulses
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1. The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation;AIP Advances;2024-01-01
2. The structural and optical properties of ternary mixed crystals In Ga1−As with zinc-blende structure by first-principle calculations;Physica B: Condensed Matter;2019-09
3. Investigations in electronic quantum transport of quasi two dimensional InxGa1-xAs/InP nanostructure superlattice for infrared detection;Superlattices and Microstructures;2019-03
4. Theoretical study on the electronic and optical properties of bulk and surface (001) In x Ga 1-x As;Physica B: Condensed Matter;2018-05
5. Full-potential calculations of structural and optoelectronic properties of cubic indium gallium arsenide semiconductor alloys;Optik;2016-10
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