Thermal stability and hydrogen induced abstraction of silyl groups on Si(100) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference43 articles.
1. Thermal and electron-beam-induced reaction of disilane on Si(100)-(2×1)
2. Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1
3. Decomposition mechanisms of SiHx species on Si(100)‐(2×1) for x=2, 3, and 4
4. Dissociative chemisorption mechanisms of disilane on Si(100)-(2×1) and H-terminated Si(100) surfaces
5. Role of hydrogen desorption in the chemical-vapor deposition of Si(100) epitaxial films using disilane
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1. Evolution of medium-range order and surface compositions by mechanism-driven model with realistic network;Applied Surface Science;2019-01
2. Si(100)2×1 Epitaxy: A Kinetic Monte Carlo Simulation of the Surface Growth;Physics Procedia;2013
3. Kinetic Monte Carlo simulation of the epitaxial growth of Si(100);physica status solidi (c);2012-09-11
4. Density functional study of the decomposition pathways of SiH3and GeH3at the Si(100) and Ge(100) surfaces;Journal of Physics: Condensed Matter;2012-02-21
5. Ab initiostudy of the diffusion and decomposition pathways ofSiHxspecies on Si(100);Physical Review B;2009-04-28
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