Density functional study of the decomposition pathways of SiH3and GeH3at the Si(100) and Ge(100) surfaces
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/24/i=10/a=104002/pdf
Reference31 articles.
1. Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement
2. Thin-Film Silicon –Growth Process and Solar Cell Application–
3. Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films
4. Interplay of physical and chemical aspects in the PECVD and etching of thin solid films
5. Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition
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1. CVD precursors for transition metal oxide nanostructures: molecular properties, surface behavior and temperature effects;physica status solidi (a);2013-10-08
2. Opening the Pandora's jar of molecule-to-material conversion in chemical vapor deposition: Insights from theory;International Journal of Quantum Chemistry;2013-07-02
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