Growth of the Ge overlayer on Si(100)-(2×1)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference26 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2×1)
4. STM study of Ge overlayers on Si(001)
5. Surface stress and interface formation
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1. Surface electronic structure of Si1−x Ge x (001)-2 × 1: a synchrotron radiation photoemission study;Applied Physics Express;2020-08-27
2. Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: electronic structure study via synchrotron radiation photoemission;Applied Physics Express;2020-07-08
3. Ultrathin films of Ge on the Si(100)2 × 1 surface;Surface and Interface Analysis;2017-11-28
4. Surface electronic structure of epi germanium (001)-2 × 1;Applied Physics Express;2017-06-19
5. Photoelectron spectroscopy of atomic core levels on the silicon surface: A review;Technical Physics;2004-10
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