Hopping motion of chlorine atoms on Si(100)-(2×1) surfaces induced by carrier injection from scanning tunneling microscope tips
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference23 articles.
1. Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms
2. Charge Injection and STM-Induced Vacancy Migration on GaAs(110)
3. Single-Molecule Dissociation by Tunneling Electrons
4. Site-Specific Displacement of Si Adatoms on Si(111)-(7×7)
5. Cryogenic UHV-STM Study of Hydrogen and Deuterium Desorption from Si(100)
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1. Vacancy diffusion on a brominated Si(100) surface: Critical effect of the dangling bond charge state;The Journal of Chemical Physics;2022-09-28
2. Dangling bonds on the Cl- and Br-terminated Si(100) surfaces;Applied Surface Science;2022-07
3. Si epitaxy on Cl-Si(100);Applied Surface Science;2022-07
4. Local removal of silicon layers on Si(1 0 0)-2 × 1 with chlorine-resist STM lithography;Applied Surface Science;2020-04
5. STM-Induced Desorption and Lithographic Patterning of Cl–Si(100)-(2 × 1);The Journal of Physical Chemistry A;2019-11-14
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