Charge Injection and STM-Induced Vacancy Migration on GaAs(110)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.76.4725/fulltext
Reference32 articles.
1. Atomic-scale surface modifications using a tunnelling microscope
2. Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope
3. Fabrication of Atomic-Scale Structures on Si(001) Surfaces
4. Atomic and Molecular Manipulation with the Scanning Tunneling Microscope
5. Manipulation of Adsorbed Atoms and Creation of New Structures on Room-Temperature Surfaces with a Scanning Tunneling Microscope
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