Temperature-dependent facet development in the deposition of GaInP on non-planar surfaces-Reference-Cited by-同舟云学术

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Temperature-dependent facet development in the deposition of GaInP on non-planar surfaces

Published:1997-01 Issue:2-3 Volume:370 Page:179-189
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Bastos P.L.,Anders M.J.,Bongers M.M.G.,Schermer J.J.,Giling L.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference48 articles.

1. Bandgap engineering of semiconductor heterostructures by molecular beam epitaxy: physics and applications

2. LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

3. Interface control in GaAs/GaInP superlattices grown by OMCVD

4. Two-dimensional electron gases in low-pressure metalorganic vapour phase epitaxially grown InGaP homojunctions

5. Order/disorder heterostructure in Ga0.5In0.5P with ΔEg = 160 meV

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface facetting induced by adsorbates;Progress in Surface Science;2003-11

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