Bandgap engineering of semiconductor heterostructures by molecular beam epitaxy: physics and applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference66 articles.
1. Band-gap engineering via graded gap, superlattice, and periodic doping structures: Applications to novel photodetectors and other devices
2. W. Shockley, U.S. Patent 2 569 347 (1951).
3. A proposed class of hetero-junction injection lasers
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