STM studies of the initial stages of growth of Sb on Si(100) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference37 articles.
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1. Ultra-shallow dopant profiles as in-situ electrodes in scanning probe microscopy;Scientific Reports;2022-03-08
2. Switching of the Dimer-Row direction through Sb-passivation on the vicinal Si(001)-4° off surface of a single domain;Journal of Applied Science and Engineering A;2021-12-01
3. Low-temperature homoepitaxial growth of two-dimensional antimony superlattices in silicon;Journal of Vacuum Science & Technology A;2018-11
4. Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100);Applied Surface Science;2015-10
5. Two distinct Sb-adsorption steps onSi(5512)−2×1: Indiffusion followed by preferential adsorption;Physical Review B;2007-06-25
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