Growth of Ge–Si(111) epitaxial layers: intermixing, strain relaxation and island formation-Reference-Cited by-同舟云学术

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Growth of Ge–Si(111) epitaxial layers: intermixing, strain relaxation and island formation

Published:1998-05 Issue:1-3 Volume:406 Page:254-263
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Motta N,Sgarlata A,Calarco R,Nguyen Q,Castro Cal J,Patella F,Balzarotti A,De Crescenzi M

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference47 articles.

1. Heteroepitaxy and Strain: Applications to Electronic and Optoelectronic Materials

2. SiGe alloys and superlattices for optoelectronics

3. Thin epitaxial Ge−Si(111) films: Study and control of morphology

4. Observation of a (5 × 5) leed pattern from GexSi1−x(111) alloys

5. Surface structural changes during the initial growth of Ge on Si(111)7 × 7

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1. Dynamical evolution of Ge quantum dots on Si(111): From island formation to high temperature decay;Aggregate;2022-04-22

2. Structural changes due to reannealing of Ge thin films prepared by solid phase epitaxial growth on Si (111) surface;Thin Solid Films;2020-09

3. Steps and Ge epitaxy on vicinal Si (111) surfaces: An STM study;Surface Science;2020-06

4. TPD characterization of Al-OD-Si sites at the interface of bilayer Al0.42Si0.58O2/Ru(0001) thin-films.;Surface Science;2020-06

5. Surface morphology and structure of Ge layer on Si(111) after solid phase epitaxy;Surface Science;2018-05

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