Surface structural changes during the initial growth of Ge on Si(111)7 × 7-Reference-Cited by-同舟云学术

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Surface structural changes during the initial growth of Ge on Si(111)7 × 7

Published:1992-01 Issue: Volume:60-61 Page:112-119
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Shinoda Y.,Shimizu N.,Hibino H.,Nishioka T.,Heimlich C.,Kobayashi Y.,Ishizawa S.,Sugii K.,Seki M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference22 articles.

1. Structurally induced optical transitions in Ge-Si superlattices

2. LEED/AES Studies of the Ge on Si(111)7× 7 Surface

3. Heteroepitaxial Growth and Superstructure of Ge on Si(111)–7×7 and (100)–2×1 Surfaces

4. Observation of a (5 × 5) leed pattern from GexSi1−x(111) alloys

5. Structural analogy between GeSi(111)-5 × 5 and Si(111)-7 × 7 surfaces

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ag-induced √3 reconstruction on Si(111)/Ge-(5 × 5) and the surfactant behavior of Ag in further growth of Ge;Applied Surface Science;2015-11

2. Mechanisms of InAs/GaAs quantum dot formation during annealing of In islands;Applied Physics Letters;2013-09-23

3. Selective formation of Ge nanostructures on Si(1 1 1) surface with patterned steps;Applied Surface Science;2004-10

4. Asymptotic behaviour of stress establishment in thin films;Surface Science;2000-10

5. Effect of Boron on Solid Phase Epitaxy of Ge on Si(111) Surface;Japanese Journal of Applied Physics;2000-07-30

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