Surface morphology during strain relaxation in the growth of InAs on GaAs(110)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference23 articles.
1. Recent advances in epitaxy
2. A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes
3. Scanning-tunneling-microscopy observation of stress-driven surface diffusion due to localized strain fields of misfit dislocations in heteroepitaxy
4. Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2 (111) studied by scanning tunneling microscopy
5. Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A
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1. Linear arrays of InGaAs quantum dots on nanostructured GaAs-on-Si substrates;Applied Surface Science;2023-04
2. Growth mode in heteroepitaxial system from nano- and macro-theoretical viewpoints;Journal of Crystal Growth;2019-04
3. Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin Layers on GaAs(110);physica status solidi (b);2017-09-19
4. Growth and Characterization of InAs 1– x Sb x with Different Sb Compositions on GaAs Substrates;Chinese Physics Letters;2015-10
5. Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;2014-10
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