Growth mode in heteroepitaxial system from nano- and macro-theoretical viewpoints
Author:
Funder
JSPS KAKENHI
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes
2. Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A
3. Strain Relaxation inInAs/GaAs(111)AHeteroepitaxy
4. Semicoherent interface formation and structure in InAs/GaAs(111)A heteroepitaxy
5. An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs/GaAs(111)
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