Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin Layers on GaAs(110)-Reference-Cited by-同舟云学术

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Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin Layers on GaAs(110)

Published:2017-09-19 Issue:4 Volume:255 Page:1700241
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Ito Tomonori¹,Akiyama Toru¹,Nakamura Kohji¹

Affiliation:

1. Department of Physics Engineering, Mie University; 1577 Kurima-Machiya Tsu 514-8507 Japan

Funder

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes

2. Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A

3. Semicoherent interface formation and structure in InAs/GaAs(111)A heteroepitaxy

4. Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs/GaAs(110) Heteroepitaxy

5. Surface morphology during strain relaxation in the growth of InAs on GaAs(110)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical investigations on the growth mode of GaN thin films on an AlN(0001) substrate;Japanese Journal of Applied Physics;2019-04-23

2. Growth mode in heteroepitaxial system from nano- and macro-theoretical viewpoints;Journal of Crystal Growth;2019-04

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