A synchrotron radiation photoemission study of gallium and nitrogen adsorption on 6H-SiC, LiGaO2 and GaN substrates: initial stages of GaN formation-Reference-Cited by-同舟云学术

A synchrotron radiation photoemission study of gallium and nitrogen adsorption on 6H-SiC, LiGaO2 and GaN substrates: initial stages of GaN formation

Published:1998-08 Issue:3 Volume:411 Page:329-343
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Klauser Ruth,Asoka Kumar P.S,Chuang T.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference57 articles.

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2. Nitride-based semiconductors for blue and green light-emitting devices

3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

5. Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy

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