Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Published:2015-10 Issue: Volume:351 Page:1155-1160
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jiang Ying,Wang Qingpeng,Zhang Fuzhe,Li Liuan,Zhou Deqiu,Liu Yang,Wang Dejun,Ao Jin-Ping

Funder

State Scholarship Fund of China Scholarship Council

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference34 articles.

1. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB;Keller;IEEE Trans. Electron Devices,2001

2. Evaluation of a gate-first process for AlGaN/GaN heterostructure field-effect transistors;Li;Jpn. J. Appl. Phys.,2013

3. Effects of SiN passivation and high-electric field on AlGaN–GaN HFET degradation;Kim;IEEE Electron Device Lett.,2003

4. AlGaN/GaN HEMTs with low leakage current and high on/off current ratio;Lin;IEEE Electron Device Lett.,2010

5. Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors;Moser;Appl. Phys. Lett.,2003

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of oxygen plasma power on the performance of Ga2O3 passivated GaN ultraviolet photodetectors;Applied Surface Science;2024-11

2. Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiNx GaN MISFET with In Situ H2/N2 Plasma Pretreatment;Electronics;2023-10-31

3. High quality GaN films on miscut (1 1 1) diamond substrates through non-c orientation suppression;Results in Physics;2023-04

4. Design and Optimization of Self‐Isolation GaN HEMT with Lateral‐Polarity‐Structure;physica status solidi (RRL) – Rapid Research Letters;2023-01-04

5. Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation;Applied Physics Letters;2022-07-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3