Revisiting the twinning mechanism in directional solidification of multi-crystalline silicon sheet
Author:
Funder
Ministry of Science and Technology of Taiwan
Publisher
Elsevier BV
Subject
Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference26 articles.
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2. Study of evolution of dislocation clusters in high performance multicrystalline silicon;Stokkan;Sol. Energy Mater. Sol. Cells,2014
3. Comparison of defect formations in solar silicon growth from small random and large oriented seeds;Hsieh;J. Cryst. Growth,2015
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3. Simulation study of nucleation mechanism of grown-in dislocations near grain boundary during solidification of silicon;Physica B: Condensed Matter;2023-12
4. Influences of growth front surfaces on the grain boundary development of multi-crystalline silicon during directional solidification: 2D/3D multi-phase-field study;Materialia;2023-03
5. Dynamics at crystal/melt interface during solidification of multicrystalline silicon;High Temperature Materials and Processes;2022-01-01
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