Dislocation interaction with vicinally faceted groove at grain boundary in multi-crystalline silicon-Reference-Cited by-同舟云学术

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Dislocation interaction with vicinally faceted groove at grain boundary in multi-crystalline silicon

Published:2024-08 Issue: Volume:639 Page:127722
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yang Fan,Chuang Lu-Chung,Maeda Kensaku,Nozawa Jun,Morito Haruhiko,Fujiwara Kozo,Duffar Thierry

Publisher

Elsevier BV

Reference17 articles.

1. Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration;Buonassisi;Appl. Phys. Lett.,2006

2. Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities;Takahashi;J. Appl. Phys.,2011

3. Solar cell efficiency losses due to impurities from the crucible in multicrystalline silicon;Schindler;IEEE J. Photovoltaics,2014

4. In situ observation of grain-boundary development from a facet-facet groove during solidification of silicon;Hu;Acta Mater.,2018

5. The grain-grain-liquid triple phase line during solidification of multi-crystalline silicon;Duffar;C. R. Physique,2013

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