The atomic-scale domain wall structure and motion in HfO2-based ferroelectrics: A first-principle study-Reference-Cited by-同舟云学术

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The atomic-scale domain wall structure and motion in HfO2-based ferroelectrics: A first-principle study

Published:2020-09 Issue: Volume:196 Page:556-564
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Ding Weitong,Zhang Yuke,Tao Lingling,Yang Qiong^ORCID,Zhou Yichun

Funder

Research Foundation of Education Bureau of Hunan Province, China

National Natural Science Foundation of China

Regional Joint Fund for Basic and Applied Basic Research Fund of Guangdong Province, China

China Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications;Müller;Appl. Phys. Lett.,2011

2. Review and perspective on ferroelectric HfO2-based thin films for memory applications;Park;MRS. Commun.,2018

3. Ferroelectric HfO2-based materials for next-generation ferroelectric memories;Fan;J. Adv. Dielectr.,2016

4. Ferroelectricity in HfO2 enables nonvolatile data storage in 28nm HKMG;Müller,2012

5. Program/erase cycling degradation mechanism of HfO2-based FeFET memory devices;Zeng;IEEE Electron. Device Lett.,2019

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2. Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO₂ Thin Film;ACS Nano;2024-09-12

3. Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier;Applied Physics Letters;2024-09-09

4. Phase Stability and Phase Transition Pathways in the Rhombohedral Phase of HfO₂;The Journal of Physical Chemistry Letters;2024-09-05

5. Progress in computational understanding of ferroelectric mechanisms in HfO2;npj Computational Materials;2024-08-23

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