Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials-Reference-Cited by-同舟云学术

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Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials

Published:2011-06 Issue:11 Volume:59 Page:4335-4342
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Borisenko Konstantin B.,Chen Yixin,Cockayne David J.H.,Song Se Ahn,Jeong Hong Sik

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Nitrogen and Silicon Co-Doping of Ge 2 Sb 2 Te 5 Thin Films for Improving Phase Change Memory Performance

2. Effects of Si Doping on Phase Transition of Ge2Sb2Te5Films byin situResistance Measurements

3. Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory

4. Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film

5. THE PERFORMANCE OF Ge 2 Sb 2 Te 5 MATERIAL FOR PCRAM DEVICE

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