THE PERFORMANCE OF Ge 2 Sb 2 Te 5 MATERIAL FOR PCRAM DEVICE-Reference-Cited by-同舟云学术

THE PERFORMANCE OF Ge 2 Sb 2 Te 5 MATERIAL FOR PCRAM DEVICE

Published:2006-11 Issue:1 Volume:78 Page:261-270
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

LING YUN¹,LIN YINYIN¹,LAI LIANZHANG¹,QIAO BAOWEI²,LAI YUNFENG²,FENG JIE²,TANG TING'AO¹,CAI BINGCHU²,CHEN BOMY³

Affiliation:

1. a Department of Microelectronics , State Key Lab ASIC and System, Fudan University , Shanghai, 200433, China

2. b Research Institute of Micro/Nanometer Technology, Shanghai Jiao Tong University , Shanghai, 200030, China

3. c Silicon Storage Technology Inc , 1171 Sonora Court, Sunnyvale, CA, 94086, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580600663375

Reference12 articles.

1. Overview and the Future of Phase-Change Optical Disk Technology

2. Horii , H. Yi , J. H. “IEEE Symposium on VLSI Technolog”. pp.177 12B-5

3. Influence of Bi doping upon the phase change characteristics of Ge2Sb2Te5

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5. Nanoscale Phase Separation and Building Blocks of Ge2Sb2Te5N and Ge2Sb2Te5N2 Thin Films;Chemistry of Materials;2009-10-07