Co-sputtered phase-change Ga–Sb–Te thin films-Reference-Cited by-同舟云学术

Co-sputtered phase-change Ga–Sb–Te thin films

Published:2024 Issue:15 Volume:5 Page:6081-6089
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Kotrla Magdalena¹,Janíček Petr²³,Gutwirth Jan¹,Halenkovič Tomáš¹,Přikryl Jan³,Šlang Stanislav³^ORCID,Cheviré François⁴,Nazabal Virginie⁴¹,Němec Petr¹^ORCID

Affiliation:

1. Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 95, 53210 Pardubice, Czech Republic

2. Institute of Applied Physics and Mathematics, Faculty of Chemical Technology, University of Pardubice, Studentská 95, 532 10 Pardubice, Czech Republic

3. Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, Studentská 95, 532 10 Pardubice, Czech Republic

4. Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) – UMR 6226, F-35000 Rennes, France

Abstract

Changes between amorphous and crystalline phase of thin films with compositions equally distributed through GaSb–GaTe and GaSb–Te tie-lines fabricated by radio-frequency magnetron co-sputtering were studied.

Funder

Grantová Agentura České Republiky

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/MA/D4MA00049H

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