Correlation between structure and semiconductor-to-metal transition characteristics of VO2/TiO2/sapphire thin film heterostructures-Reference-Cited by-同舟云学术

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Correlation between structure and semiconductor-to-metal transition characteristics of VO2/TiO2/sapphire thin film heterostructures

Published:2013-12 Issue:20 Volume:61 Page:7805-7815
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Bayati M.R.,Molaei R.,Wu F.,Budai J.D.,Liu Y.,Narayan R.J.,Narayan J.

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Metal-semiconductor domain configurations during switching of VO2single crystals

2. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

3. Tungsten and fluorine co-doping of VO2 films

4. Thin film metal oxides: fundamentals and applications in electronics and energy;Ruzmetov,2010

5. Phase transition and critical issues in structure-property correlations of vanadium oxide

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1. Role of buffer layers on the strain-induced insulator-metal transition of VO ₂ thin films: a review;Critical Reviews in Solid State and Materials Sciences;2024-09-13

2. Electrochemical oxygen generation from VO2 nanoflakes decorated onto graphite sheet;Journal of Alloys and Compounds;2024-03

3. Optimizing deposition regimes to fabricate VO₂/TiO₂/c-Al₂O₃ thin films for active metasurfaces;Journal of Advanced Dielectrics;2024-01-18

4. Optimized design of nano-photonic devices for temperature self-regulating on vanadium dioxide thin films;Journal of Optics;2023-12-21

5. Microstructural and electrical investigation of polymorph stabilization and multistate transition in interface engineered epitaxial VO2 films;Applied Surface Science;2023-11

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