Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films-Reference-Cited by-同舟云学术

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Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films

Published:2022-01 Issue: Volume:222 Page:117405
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Lee Dong Hyun,Yu Geun Taek,Park Ju Yong,Kim Se Hyun,Yang Kun,Park Geun Hyeong,Ryu Jin Ju,Lee Je In,Kim Gun Hwan,Park Min Hyuk

Funder

Korea Research Institute of Chemical Technology

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference74 articles.

1. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films;Park;Adv. Mater.,2015

2. Review and perspective on ferroelectric HfO2-based thin films for memory applications;Park;MRS Commun.,2018

3. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors;Mikolajick;MRS Bull.,2018

4. Fluorite-structure antiferroelectrics;Park;Rep. Prog. Phys.,2019

5. Ferroelectricity in HfO2 enables nonvolatile data storage in 28nm HKMG;Müller,2012

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural characteristics and polarization switching behaviors in HfO2-ZrO2 ferroelectric nanolaminates;Journal of Alloys and Compounds;2024-11

2. Phase transitions in typical fluorite-type ferroelectrics;Applied Physics Letters;2024-09-02

3. Improvement of memory storage capacity and prolongation of endurance/retention through H2 plasma treatment of IGZO/HZO structure;Journal of Applied Physics;2024-08-28

4. The Enhanced Polarization Switching Speed and Endurance in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers;IEEE Electron Device Letters;2024-05

5. Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping;Nature Communications;2024-04-03

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